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TS4448RW

Taiwan Semiconductor
Part Number TS4448RW
Manufacturer Taiwan Semiconductor
Description 350mW High Speed SMD Switching Diode
Published Mar 24, 2011
Detailed Description Small Signal Product TS4448 RW Taiwan Semiconductor 350mW High Speed SMD Switching Diode FEATURES - Designed for moun...
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TS4448RW
TS4448RW

Overview
Small Signal Product TS4448 RW Taiwan Semiconductor 350mW High Speed SMD Switching Diode FEATURES - Designed for mounting on small surface - Extremely thin / leadless package - High mounting capability, strong surage with stand, high reliability - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) 1005 MECHANICAL DATA - Case: 1005 - Terminal: Gold plated, solderable per MIL-STD-750, method 2026 - Polarity: Indicated by cathode band - Weight: 6 mg (approximately) - Marking code: S5 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL VALUE Power Dissipation Repetitive Peak Reverse Voltage Mean Forward Current Non-Repetitive Peak Forward Surge Current Pulse Width = 1 μs Pulse Width = 8.
3 ms PD VRRM IO IFSM 200 100 125 2 1 Thermal Resistance (Junction to Ambient) Junction and Storage Temperature Range (Note 1) RθJA TJ , TSTG 500 -40 to +125 PARAMETER Reverse Breakdown Voltage (Note 2) Forward Voltage Reverse Leakage Current Junction Capacitance Reverse Recovery Time IF=5mA IF=100mA VR=20V VR=80V VR=0V, f=1.
0MHz (Note 3) Note 1: Valid provided that electrodes are kept at ambient temperature Note 2: Test condition : IR=100μA Note 3: Test condition : IF=IR=10mA, RL=100Ω, IRR=1mA SYMBOL V(BR) VF IR CJ trr MIN - 0.
62 - MAX 80 0.
72 1.
00 25 100 9 9 UNIT mW V mA A oC/W oC UNIT V V nA pF ns Document Number: DS_S1501011 Version: D15 Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) Forward Current (mA) 1000 Fig.
1 Typical Forward Characteristics 100 10 1 0.
1 0.
01 0 0.
2 0.
4 0.
6 0.
8 1 1.
2 1.
4 1.
6 1.
8 Forward Voltage (V) 2 Power Dissipation (mW) 420 350 280 210 140 70 0 0 Fig.
3 Admissible Power Dissipation Curve 25 50 75 100 125 150 Ambient Temperature (oC) Reverse Current (μA) Junction Capacitance (pF) TS4448 RW Taiwan Semiconductor Fig.
2 Reverse Current VS.
Reverse Voltage 100 10 1 0.
1 0.
01 0 2...


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