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IPA126N10N3G

Infineon Technologies
Part Number IPA126N10N3G
Manufacturer Infineon Technologies
Description Power-Transistor
Published Mar 27, 2011
Detailed Description IPA126N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product...
Datasheet PDF File IPA126N10N3G PDF File

IPA126N10N3G
IPA126N10N3G

Overview
IPA126N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max ID 100 12.
6 35 V mΩ A • Ideal for high-frequency switching and synchronous rectification Type IPA126N10N3 G Package Marking PG-TO220-FP 126N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 www.
DataSheet4U.
com 1) 2) Value 35 25 140 90 ±20 Unit A I D,pulse E AS V GS P tot T j, T stg T C=25 °C I D=35 A, R GS=25 Ω mJ V W °C T C=25 °C 33 -55 .
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175 55/175/56 J-STD20 and JESD22 See figure 3 Rev.
2.
2 page 1 2009...


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