New Product
SiA429DJT
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) RDS(on) () 0.0205 at VGS = - 4.5 V - 20 0.027 at VGS = - 2.5 V 0.036 at VGS = - 1.8 V 0.060 at VGS = - 1.5 V ID (A) - 12a - 12a - 12a -4 24.5 nC Qg (Typ.)
Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET New Thermally Enhan...
