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LP2305LT1G
30V P-Channel MOSFET
Description
LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-4.2A = 70mΩ RDS(ON), Vgs@-4.5V, Ids@-4.0A = 85 mΩ RDS(ON), Vgs@-2.5V, Ids@-1.0A = 130mΩ LP2305LT1G 3 1 2 SOT– 23 (TO–236AB) FEATURES Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance ORDERING INFORMATION D Device LP2...
Leshan Radio Company
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LP2305LT1G
30V P-Channel MOSFET
- Leshan Radio Company
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