INSULATED GATE BIPOLAR TRANSISTOR
Description
PD - 96305
INSULATED GATE BIPOLAR TRANSISTOR Features
Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Free
C
IRG7PH46UPbF IRG7PH46U-EP
VCES = 1200V IC = 75A, TC = 100°C
G E
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