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DE275-101N30A

Part Number	DE275-101N30A
Manufacturer	IXYS Corporation
Description	RF Power MOSFET
Published	Apr 28, 2011
Detailed Description	DE275-101N30A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol VDSS VDGR ...
Datasheet	DE275-101N30A PDF File

Overview

DE275-101N30A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.
2Ω IS = 0 VDSS ID25 Maximum Ratings 100 100 ±20 ±30 30.
0 240 TBD TBD 5.
5 >200 550 V V V V A A A mJ V/ns V/ns W W W C/W C/W SG1 SG2 GATE = = ≤ = 100 V 30.
0 A 0.
06 Ω 550 W RDS(on) PDC PDC PDHS PDAMB RthJC RthJHS Symbol Test Conditions Tc = 25°C Derate 4.
4W/°C above 25°C Tc = 25°C DRAIN 270 3.
5 0.
25 0.
53 Characteristic Values TJ...

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DE275-101N30A RF Power MOSFET - IXYS Corporation

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