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IXFL32N120P

IXYS Corporation
Part Number IXFL32N120P
Manufacturer IXYS Corporation
Description Polar HiPerFET Power MOSFET
Published May 13, 2011
Detailed Description Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET ( Electrically Isolated Tab) N-Channel Enhancement Mo...
Datasheet PDF File IXFL32N120P PDF File

IXFL32N120P
IXFL32N120P

Overview
Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL www.
DataSheet4U.
net IXFL32N120P VDSS ID25 RDS(on) trr = = ≤ ≤ 1200V 24A 340mΩ 300ns ISOPLUS i5-PakTM Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1200 1200 ± 30 ± 40 24 100 16 2 20 520 -55 .
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+150 150 -55 .
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+150 V V V V A A A J V/ns W °C °C °C °C °C V~ V~ N/lb.
g Advantages z z z z...


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