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IXFL44N80

IXYS Corporation
Part Number IXFL44N80
Manufacturer IXYS Corporation
Description HiPerFET Power MOSFETs ISOPLUS264
Published May 13, 2011
Detailed Description HiPerFETTM Power MOSFETs ISOPLUS264TM (Electrically Isolated Backside) Single Die MOSFET N-Channel Enhancement Mode Aval...
Datasheet PDF File IXFL44N80 PDF File

IXFL44N80
IXFL44N80

Overview
HiPerFETTM Power MOSFETs ISOPLUS264TM (Electrically Isolated Backside) Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg www.
DataSheet4U.
net IXFL 44N80 VDSS = 800 V ID25 = 44 A RDS(on) = 0.
165 Ω Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 800 800 ± 20 ± 30 44 176 44 64 4 5 550 -55 .
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+150 150 -55 .
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+150 V V V V A A A mJ J V/ns W °C °C °C °C V~ V~ g ISOPLUS-264TM G C E (TAB) G = Gate E = Emitter C = Collector Tab = Collector Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) z z z Low RDS (on) HDMOSTM process Rugged polysilicon gate cell struct...


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