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IXFN100N50P

IXYS Corporation
Part Number IXFN100N50P
Manufacturer IXYS Corporation
Description Power MOSFET
Published May 13, 2011
Detailed Description PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN 100N50P VDSS ID25...
Datasheet PDF File IXFN100N50P PDF File

IXFN100N50P
IXFN100N50P

Overview
PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN 100N50P VDSS ID25 RDS(on) trr = = ≤ ≤ 500 V 90 A 49 mΩ 200 ns Symbol VDSS VDGR VGSS VGSM ID25 IDRMS IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 2 Ω TC = 25° C Maximum Ratings 500 500 ±30 ±40 90 75 250 100 100 5 20 1040 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A A mJ J V/ns W °C °C °C °C V~ V~ miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal.
Features • International standard package • Encapsulating epoxy meets www.
DataSheet4U.
net 1.
6 mm (0.
062 in.
) from case for 10 s 50/60 Hz, RMS t = 1 min IISOL ≤1 mA t=1s Mounting torque Terminal connection torque SOT-227B 300 2500 3000 UL 94 V-0, flammability classification isolation Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect • miniBLOC with Aluminium nitride l l 1.
5 / 13 Nm/lb.
in.
1.
5 / 13 Nm/lb.
in.
30 g l Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT, Note 1 TJ = 125° C Characteristic Values Min.
Typ.
Max.
500 3.
0 5.
0 ±200 25 2000 49 V V nA µA µA mΩ Advantages l l l Easy to mount Space savings High power density © 2006 IXYS All rights reserved DS99497E(01/06) IXFN 100N50P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min.
Typ.
Max.
50 80 20 VGS = 0 V, VDS = 25 V, f = 1 MHz 1700 140 36 VGS = 10 V, VDS = 0.
5 VDSS, ID = IT RG = 1 Ω (External) 29 110 ...


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