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IXFN300N10P

IXYS Corporation
Part Number IXFN300N10P
Manufacturer IXYS Corporation
Description Polar Power MOSFET HiPerFET
Published May 13, 2011
Detailed Description Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intri...
Datasheet PDF File IXFN300N10P PDF File

IXFN300N10P
IXFN300N10P

Overview
Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL VISOL Md 1.
6mm (0.
062 in.
) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA www.
DataSheet4U.
net IXFN300N10P VDSS ID25 RDS(on) trr = = ≤ ≤ 100V 295A 5.
5mΩ 200ns Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C Maximum Ratings 100 100 ±20 ± 30 295 100 900 100 3 20 1070 -55 .
.
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+175 175 -55 .
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+175 300 2500 3000 1.
5/13...


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