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IXFN52N90P

IXYS Corporation
Part Number IXFN52N90P
Manufacturer IXYS Corporation
Description Power MOSFET
Published May 13, 2011
Detailed Description Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intri...
Datasheet PDF File IXFN52N90P PDF File

IXFN52N90P
IXFN52N90P

Overview
Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL VISOL Md 1.
6mm (0.
062 in.
) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA www.
DataSheet4U.
net IXFN52N90P VDSS ID25 RDS(on) trr = = ≤ ≤ 900V 43A 160mΩ 300ns Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 900 900 ± 30 ± 40 43 104 26 2 20 890 -55 .
.
.
+150 150 -55 .
.
.
+150 300 2500 3000 1.
5/13 1.
3/11.
5 30 V V V V A A A J V/ns W °C °C ...


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