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IXFP130N10T

Part Number	IXFP130N10T
Manufacturer	IXYS Corporation
Description	Power MOSFET
Published	May 13, 2011
Detailed Description	Preliminary Technical Information TrenchTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intr...
Datasheet	IXFP130N10T PDF File

Overview

Preliminary Technical Information TrenchTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode IXFA130N10T IXFP130N10T Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 100 V 100 V  20 V  30 V TC = 25C Lead Current Limit, RMS TC = 25C, Pulse Width Limited by TJM 130 A 120 A 350 A TC = 25C TC = 25C 65 A 750 mJ TC = 25C 360 W -55 .
.
.
+175 C 175 C -55 .
.
.
+175 C Maximum Lead Temperature for Soldering 300 °C 1.
6 mm (0.
062in.
) from Case for 10s 260 °C Mounting Force (TO-263) M...

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