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3VD182600YL

Part Number	3VD182600YL
Manufacturer	Silan Microelectronics
Description	HIGH VOLTAGE MOSFET CHIPS
Published	May 19, 2011
Detailed Description	3VD182600YL 3VD182600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD182600YL is a High voltage N-Channel enhancement mode...
Datasheet	3VD182600YL PDF File

Overview

3VD182600YL 3VD182600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD182600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology.
Ø Ø Ø Ø Ø Advanced termination scheme to provide enhanced voltage-blocking capability.
Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode The chips may packaged in TO-92DT-3L type and the typical equivalent product is 1N60C.
The packaged product is widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
Ø Ø Die size: 1.
90mm*1.
75mm.
Chip Thickness: 300±20µm.
Top metal : Al, Backside Metal : Ag.
CHIP TOPOGRAPHY...

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3VD182600YL HIGH VOLTAGE MOSFET CHIPS - Silan Microelectronics

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