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IXFR20N100P

IXYS Corporation
Part Number IXFR20N100P
Manufacturer IXYS Corporation
Description Polar Power MOSFET HiPerFET
Published May 23, 2011
Detailed Description PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VG...
Datasheet PDF File IXFR20N100P PDF File

IXFR20N100P
IXFR20N100P

Overview
PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL FC www.
DataSheet4U.
net IXFR20N100P VDSS ID25 RDS(on) trr = 1000V = 11A ≤ 640mΩ ≤ 300ns Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1000 1000 ± 30 ± 40 11 50 10 500 15 230 -55 .
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+150 150 -55 .
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+150 V V V V A A A mJ V/ns W °C °C °C °C °C V~ N/lb.
g ISOPLUS247 (IXFR) E153432 Isolated Tab G = Gate S = Source D = Drain Features • Silicon chip...


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