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IXFR30N60P

IXYS Corporation
Part Number IXFR30N60P
Manufacturer IXYS Corporation
Description PolarHV HiPerFET Power MOSFET
Published May 23, 2011
Detailed Description PolarHVTM HiPerFET Power MOSFET IXFC 30N60P IXFR 30N60P Electrically Isolated Back Surface N-Channel Enhancement Mode ...
Datasheet PDF File IXFR30N60P PDF File

IXFR30N60P
IXFR30N60P

Overview
PolarHVTM HiPerFET Power MOSFET IXFC 30N60P IXFR 30N60P Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL www.
DataSheet4U.
net VDSS = 600 V ID25 = 15 A RDS(on) ≤ 250 mΩ ≤ 250 ns trr Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 3 Ω TC = 25°C Maximum Ratings 600 600 ±30 ±40 15 80 30 50 1.
5 10 166 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V G D ISOPLUS220TM (IXFC) E153432 A A A mJ J V/ns W °C °C °C °C V~ N/lb N/lb g g S Isolated back surface ISOPLUS247TM (IXFR) E153432 Isolated back surface G = Gate S = Source D = Drain 1.
6 mm (0.
062 in.
) from case for 10 s 50/60 Hz, RMS, t = 1minute, leads-to-tab Mounting Force ISOPLUS220 ISOPLUS247 (IXFC) (IXFR) 300 2500 11.
.
65 / 2.
5.
.
15 20.
.
120 / 4.
5.
.
25 2 5 VISOL FC Weight Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) Applications z DC-DC converters z z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ±30 V, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min.
Typ.
Max.
600 3.
0 5.
0 ±100 25 500 250 V V nA μA μA mΩ Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages z Easy assembly z z VGS = 10 V, ID = 15 A Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % Space savings High power density DS99341E(03/06) © 2006 IXYS All rights reserved IXFC 30N60P IXFR 30N60P Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min.
Typ.
Max.
15 27 3820 VGS = 0 V, VDS = 25 V, f = 1 MHz 360 28 22 VGS = 10 V, VDS = VDSS , ID = 15 A...


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