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IXFV110N25T

Trench Gate Power HiperFET

Description

Preliminary Technical Information Trench Gate Power HiperFET N-Channel Enhancement Mode Avalanche Rated IXFV110N25T IXFV110N25TS VDSS ID25 RDS(on) = 250V = 110A ≤ 24mΩ Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C L...

IXYS Corporation

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IXFV110N25T Trench Gate Power HiperFET - IXYS Corporation
IXFV110N25TS Trench Gate Power HiperFET - IXYS Corporation

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