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SPI15N60CFD

Infineon Technologies
Part Number SPI15N60CFD
Manufacturer Infineon Technologies
Description CoolMOSTM Power Transistor
Published May 27, 2011
Detailed Description SPI15N60CFD CoolMOSTM Power Transistor Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery c...
Datasheet PDF File SPI15N60CFD PDF File

SPI15N60CFD
SPI15N60CFD

Overview
SPI15N60CFD CoolMOSTM Power Transistor Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Qualified according to JEDEC1) for target applications CoolMOS CFD designed for: • Softswitching PWM Stages • LCD & CRT TV Type Type SPI15N60CFD SPP15N60CFD Package Package PG-TO262 PG-TO220 Marking Marking 15N60CFD 15N60CFD Product Summary V DS @ Tjmax R DS(on),max ID 650 V 0.
330 Ω 13.
4 PG-TO262 A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive2),3) www.
DataSheet4U.
net Value 13.
4 8.
4 33 460 0.
8 13.
4 Unit A I D,pulse E AS E AR I AR dv /dt dv /dt di /dt V GS P tot T j, T stg T C=25 °C I D=6.
7 A, V DD=50 V I D=13.
4 A, V DD=50 V mJ Avalanche current, repetitive2),3) Drain source voltage slope Reverse diode d v /dt Maximum diode commutation speed Gate source voltage A V/ns V/ns A/µs V I D=13.
4 A, V DS=480 V, T j=125 °C I S=13.
4 A, V DS=480 V, T j=125 °C static AC (f >1 Hz) T C=25 °C 80 40 600 ±20 ±30 156 -55 .
.
.
150 Power dissipation Operating and storage temperature Mounting torque W °C Ncm M3 & 3.
5 screws 60 Rev.
1.
0 page 1 2007-01-29 SPI15N60CFD Parameter Symbol Conditions min.
Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient Soldering temperature, wave soldering only allowed at leads R thJC R thJA leaded 1.
6 mm (0.
063 in.
) from case for 10 s 0.
8 62 K/W Values typ.
max.
Unit T sold - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Avalanche breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=250 µA V (BR)DS V GS(th) V GS=0 V, I D=13.
4 A V DS=V GS, I D=750 µA V DS=600 V, V GS=0 V, T j=25 °C V DS=600 V, V GS=0 V, T j=150 °C Gate-sou...


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