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IXFG55N50

Part Number	IXFG55N50
Manufacturer	IXYS Corporation
Description	HiPerFET Power MOSFETs ISOPLUS247
Published	May 30, 2011
Detailed Description	HiPerFETTM Power MOSFETs IXFG 55N50 ISOPLUS247TM (Electrically Isolated Back Surface) Single Die MOSFET VDSS ID25 RDS(o...
Datasheet	IXFG55N50 PDF File

Overview

HiPerFETTM Power MOSFETs IXFG 55N50 ISOPLUS247TM (Electrically Isolated Back Surface) Single Die MOSFET VDSS ID25 RDS(on) = 500 V = 48 A = 90 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 500 500 ± 20 ± 30 48 220 55 60 3 5 400 -40 .
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+150 150 -40 .
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+150 V V V V A A A mJ J V/ns W °C °C °C °C V~ ISO264TM G D S (TAB) G = Gate S = Source D = Drain Features z z z z z 1.
6 mm (0.
063 in.
) from ...

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IXFG55N50 HiPerFET Power MOSFETs ISOPLUS247 - IXYS Corporation

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