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IXFH150N17T2

IXYS Corporation
Part Number IXFH150N17T2
Manufacturer IXYS Corporation
Description Power MOSFET
Published May 30, 2011
Detailed Description Advance Technical Information TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrin...
Datasheet PDF File IXFH150N17T2 PDF File

IXFH150N17T2
IXFH150N17T2

Overview
Advance Technical Information TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH150N17T2 IXFT150N17T2 VDSS ID25 RDS(on) trr = = ≤ ≤ 175V 150A 12.
0mΩ 160ns TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C Maximum Ratings 175 175 ± 20 ± 30 150 400 75 1.
0 15 880 -55 .
.
.
+175 175 -55 .
.
.
+175 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.
in.
g g G = Gate S = Source D = Drain Tab = Drain G D S D ...


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