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IXFH20N100P

IXYS Corporation
Part Number IXFH20N100P
Manufacturer IXYS Corporation
Description Polar Power MOSFET HiPerFET
Published May 30, 2011
Detailed Description PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VG...
Datasheet PDF File IXFH20N100P PDF File

IXFH20N100P
IXFH20N100P

Overview
PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C IXFH20N100P IXFT20N100P VDSS ID25 RDS(on) trr = = ≤ ≤ 1000V 20A 570mΩ 300ns Maximum Ratings 1000 1000 ± 30 ± 40 20 50 10 800 15 660 -55 .
.
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+150 150 -55 .
.
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+150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.
in.
g g TO-247 (IXFH) TAB TO-268 (IXFT) G S TAB G = Gate S = Source D = Drain TAB = Drain Maximum lea...


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