N-Channel MOSFET
Description
PROCESS
Small Signal MOSFET Transistor
N-Channel Enhancement-Mode Transistor Chip
CP394R
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PROCESS DETAILS Die Size Die Thickness Gate Bonding Pad Area Source Bonding Pad Area Top Side Metalization Back Side Metalization 15.7 x 15.7 MILS 3.9 MILS 3.9 x 3.9 MILS 9.1 x 8.1 MILS Al-Si - 35,000Å Au - 12,000Å
GEOMETRY GROSS DIE PER 6 INCH W...
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