POWER TRANSISTOR
Description
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage
VCEO= -100V(Min) ·Fast switching speed ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for TV, monitor vertical output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER...
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