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2SA1599

Part Number	2SA1599
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jul 1, 2011
Detailed Description	isc Silicon PNP Power Transistor 2SA1599 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -40(V)(Min.) ...
Datasheet	2SA1599 PDF File

Overview

isc Silicon PNP Power Transistor 2SA1599 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -40(V)(Min.
) ·Low Collector Saturation Voltage :VCE(sat)= -0.
3(V)(Max.
)@IC= -5A ·Large Current Capability-IC= -10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for mid-switching applications, and is ideal for use as a ramp driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -20 A IB Base Current-Continuous -1.
5 A IBM Base Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 5 ℃/W isc website： www.
iscsemi.
com 1 isc & isc...

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