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2SA1469

Part Number	2SA1469
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jul 1, 2011
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 70(Min)@ (VCE= -2V, IC= -1A) ·Low Saturation Volt...
Datasheet	2SA1469 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 70(Min)@ (VCE= -2V, IC= -1A) ·Low Saturation Voltage- : VCE(sat)= -0.
4V(Max)@ (IC= -2.
5A, IB= -0.
125A) ·Fast Switching Time ·Complement to Type 2SC3746 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Various inductance lamp drivers for electrical equipment ·Inverters, converters (strobo, flash, fluorescent lamp lighting circuit).
·Power amp(high power car stereo, motor controller).
·High-speed switching (switching regulator, driver).
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -7 A 2 W 20 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA1469 isc website：www.
i...

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