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2SA1195

Part Number	2SA1195
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jul 1, 2011
Detailed Description	isc Silicon PNP Power Transistor 2SA1195 DESCRIPTION ·Low Collector Saturation Voltage ·High voltage ·Complement to Ty...
Datasheet	2SA1195 PDF File

Overview

isc Silicon PNP Power Transistor 2SA1195 DESCRIPTION ·Low Collector Saturation Voltage ·High voltage ·Complement to Type 2SC2483 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range VALUE -160 -160 -6 -1.
5 2 UNIT V V V A w 10 W 175 ℃ -55~150 ℃ isc website：www.
iscsemi.
com isc & iscsemi is re...

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