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2SA1185

POWER TRANSISTOR

Description

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min.) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.8V(Max.)@ IC= -7A ·Good Linearity of hFE ·Large Collector Current ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio f...

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