POWER TRANSISTOR
Description
isc Silicon PNP Power Transistor
2SA1120
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -20V (Min) ·Low Collector Saturation Voltage-
: VCE(sat) = -1.0V(Max.)@ IC= 0.1A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Strobo flash applications ·Audio power amplifer applications
ABSOLUTE MAXIM...
Inchange Semiconductor
2SA1120 PDF File
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