isc Silicon PNP Power Transistor
2SA1065
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC2489 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for AF amplifier, high power amplifier applications.
A...