isc Silicon PNP Power Transistor
2SA1051
DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min.) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifer and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)...
