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2SA907

Part Number	2SA907
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jul 4, 2011
Detailed Description	isc Silicon PNP Power Transistor 2SA907 DESCRIPTION ·High Power Dissipation- : PC= 150W(Max.)@TC=25℃ ·Collector-Emitte...
Datasheet	2SA907 PDF File

Overview

isc Silicon PNP Power Transistor 2SA907 DESCRIPTION ·High Power Dissipation- : PC= 150W(Max.
)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.
) ·Complement to Type 2SC1584 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for amplifier and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -5 A 150 W 150 ℃ Tstg Sto...

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