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2SA757

Part Number	2SA757
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jul 4, 2011
Detailed Description	isc Silicon PNP Power Transistor 2SA757 DESCRIPTION ·High Power Dissipation- : PC= 60W(Max.)@TC=25℃ ·Collector-Emitter...
Datasheet	2SA757 PDF File

Overview

isc Silicon PNP Power Transistor 2SA757 DESCRIPTION ·High Power Dissipation- : PC= 60W(Max.
)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -90V(Min.
) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifier power output stage and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -90 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -12 A 60 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA757 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; RBE= ∞ V...

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