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2SA755

Part Number	2SA755
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jul 4, 2011
Detailed Description	isc Silicon PNP Power Transistor 2SA755 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Low C...
Datasheet	2SA755 PDF File

Overview

isc Silicon PNP Power Transistor 2SA755 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.
3V(Max.
) @ IC= -1.
5A ·Good Linearity of hFE ·Complement to Type 2SC1419 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -2 A PC Total Power Dissipation@ TC=25℃ 20 W TJ Junction Temperature 150 ℃ Tstg Stor...

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