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CEM11C2
Jul. 2002
Dual Enhancement Mode Field Effect Transistor ( N and P Channel)
5
FEATURES
30V ,7A , RDS(ON)=30m Ω @VGS=10V. RDS(ON)=42mΩ @VGS=4.5V. -20V , -4.3A , RDS(ON)=90m Ω @VGS=-4.5V. RDS(ON)=120mΩ @VGS=-2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface Mount Packa...
