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IPP100N04S3-03

Infineon Technologies
Part Number IPP100N04S3-03
Manufacturer Infineon Technologies
Description OptiMOS-T Power-Transistor
Published Jul 6, 2011
Detailed Description www.DataSheet4U.net IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 OptiMOS®-T Power-Transistor Product Summary V DS R ...
Datasheet PDF File IPP100N04S3-03 PDF File

IPP100N04S3-03
IPP100N04S3-03

Overview
www.
DataSheet4U.
net IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 OptiMOS®-T Power-Transistor Product Summary V DS R DS(on) (SMD Version) ID 40 2.
5 100 V mΩ A Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB100N04S3-03 IPI100N04S3-03 IPP100N04S3-03 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3PN0403 3PN0403 3PN0403 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol ID Conditions T C=25°C, V GS=10V1) T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=80 A Value 100 100 400 898 ±20 214 -55 .
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+175 55/175/56 mJ V W °C Unit A ...


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