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IPB60R520CP

Infineon Technologies
Part Number IPB60R520CP
Manufacturer Infineon Technologies
Description Power Transistor
Published Aug 1, 2011
Detailed Description IPB60R520CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R ON x Qg • Ultra low gate charge • Extreme dv...
Datasheet PDF File IPB60R520CP PDF File

IPB60R520CP
IPB60R520CP

Overview
IPB60R520CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R ON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max @ Tj = 25°C Q g,typ 650 V 0.
520 Ω 24 nC PG-TO263 CoolMOS CP is designed for: • Hard switching SMPS topologies Type IPB60R520CP Package PG-TO263 Marking 6R520P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0.
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480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T j, T stg T C=25 °C T C=25 °C I D=2.
5 A, V DD=50 V I D=2.
5 A, V DD=50 V Value 6.
8 4.
3 17 ...


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