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IPD64CN10NG

Infineon Technologies
Part Number IPD64CN10NG
Manufacturer Infineon Technologies
Description Power Transistor
Published Aug 1, 2011
Detailed Description IPD64CN10N G IPU64CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(...
Datasheet PDF File IPD64CN10NG PDF File

IPD64CN10NG
IPD64CN10NG

Overview
IPD64CN10N G IPU64CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max ID 100 64 17 V mΩ A • Ideal for high-frequency switching and synchronous rectification Type IPD64CN10N G IPU64CN10N G Package Marking PG-TO252-3 64CN10N PG-TO251-3 64CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) Value 17 13 68 34 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C I D=17 A, R GS=25 Ω I D=17 A, V DS=80 V, di /dt =100 A/µs, T j,max=175 °C ...


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