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UNR32AE

Panasonic Semiconductor
Part Number UNR32AE
Manufacturer Panasonic Semiconductor
Description NPN Transistor
Published Sep 1, 2011
Detailed Description www.DataSheet4U.net Transistors with built-in Resistor UNR32AE Silicon NPN epitaxial planar type For digital circuits ...
Datasheet PDF File UNR32AE PDF File

UNR32AE
UNR32AE

Overview
www.
DataSheet4U.
net Transistors with built-in Resistor UNR32AE Silicon NPN epitaxial planar type For digital circuits  Features  Suitable for high-density mounting and downsizing of the equipment  Contribute to low power consumption 0.
23+0.
05 –0.
02 0.
33+0.
05 –0.
02 3 0.
15 min.
0.
80±0.
05 1.
20±0.
05 0.
10+0.
05 –0.
02 Unit: mm (0.
40) (0.
40) 0.
80±0.
05 1.
20±0.
05 5° Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 80 100 125 –55 to +125 Unit V V mA mW °C °C 1: Base 2: Emitter 3: Collector 0.
15 min.
 Absolute Maximum Ratings Ta = 25°C 1 2 0 to 0.
01 0.
52±0.
03 5° SSSMini3-F1 Package Marking Symbol: KC Internal Connection R1 (47 kΩ) R2 (22 kΩ) C B E  Electrical Characteristics Ta = 25°C±3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Resistance ratio Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1 / R2 fT VCB = 10 V, IE = —2 mA, f = 200 MHz Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.
3 mA VCC = 5 V, VB = 0.
5 V, RL = 1 kΩ VCC = 5 V, VB = 6 V, RL = 1 kΩ —30% 1.
7 47 2.
1 150 4.
9 0.
2 +30% 2.
6 60 0.
25 Min 50 50 0.
1 0.
5 0.
2 Typ Max Unit V V µA µA mA  V V V kΩ  MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
0.
15 max.
Publication date: November 2004 SJH00106AED 1 www.
DataSheet4U.
net UNR32AE UNR32AE_PT-Ta UNR32AE_IC-VCE UNR32AE_VCE(sat)-IC PT  Ta Ta = 25°C IB = 500 µA 400 µA 80 0.
08 ...


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