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IPP45N04S4L-08

Part Number	IPP45N04S4L-08
Manufacturer	Infineon Technologies
Description	OptiMOS-T2 Power-Transistor
Published	Oct 20, 2011
Detailed Description	www.DataSheet.co.kr IPB45N04S4L-08 IPI45N04S4L-08, IPP45N04S4L-08 OptiMOS®-T2 Power-Transistor Product Summary V DS R...
Datasheet	IPP45N04S4L-08 PDF File

Overview

www.
DataSheet.
co.
kr IPB45N04S4L-08 IPI45N04S4L-08, IPP45N04S4L-08 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max (SMD version) ID 40 7.
6 45 PG-TO262-3-1 V mΩ A Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested PG-TO263-3-2 PG-TO220-3-1 Type IPB45N04S4L-08 IPI45N04S4L-08 IPP45N04S4L-08 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N04L08 4N04L08 4N04L08 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25°C I D=22A T C=25°C Value 45 42 180 55 45 +20/-16 45 -55 .
.
.
+175 55/175/56 mJ A V W °C Unit A Rev.
1.
0 page 1 2010-04-13 Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr IPB45N04S4L-08 IPI45N04S4L-08, IPP45N04S4L-08 Parameter Symbol Conditions min.
Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0V, I D= 1mA V GS(th) I DSS V DS=V GS, I D=17µA V DS=40V, V GS=0V V DS=18V, V GS=0V, T j=85°C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20V, V DS=0V V GS=4.
5V, I D=22A V GS=4.
5V, I D=22A, SMD version V GS=10 V, I D=45 A V GS=10 V, I D=45 A, SMD version 40 1.
2 1.
7 0.
01 1 9.
5 9.
2 6.
9 6.
6 2.
2 1 20 100 10.
9 10.
6 7.
9 7.
6 nA mΩ µA V 3.
3 62 62 40 K/W Values typ.
max.
Unit Rev.
1.
0 page 2 ...

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IPP45N04S4L-08 OptiMOS-T2 Power-Transistor - Infineon Technologies

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