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011N40P1

KEC
Part Number 011N40P1
Manufacturer KEC
Description KHB011N40P1
Published Nov 21, 2011
Detailed Description www.DataSheet.co.kr SEMICONDUCTOR TECHNICAL DATA General Description KHB011N40P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRAN...
Datasheet PDF File 011N40P1 PDF File

011N40P1
011N40P1

Overview
www.
DataSheet.
co.
kr SEMICONDUCTOR TECHNICAL DATA General Description KHB011N40P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB011N40P1 A O C F E G B Q I DIM MILLIMETERS _ 0.
2 9.
9 + A B C D E This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES VDSS(Min.
)= 400V, ID= 10.
5A Drain-Source ON Resistance : RDS(ON)=0.
53 @VGS =10V Qg(typ.
) =32.
5nC K M L J D N N P F G H I J 15.
95 MAX 1.
3+0.
1/-0.
05 _ 0.
1 0.
8 + _ 0.
2 3.
6 + _ 0.
1 2.
8 + 3.
7 0.
5+0.
1/-0.
05 1.
5 _ 0.
3 13.
08 + 1.
46 _ 0.
1 1.
4 + _ 0.
1 1.
27 + _ 0.
2 2.
54 + _ 0.
2 4.
5 + _ 0.
2 2.
4 + _ 0.
2 9.
2 + H K L M N O P Q 1 2 3 MAXIMUM RATING (Tc=25 RATING CHARACTERISTIC SYMBOL KHB011N40F1 UNIT KHB011N40P1 KHB011N40F2 400 30 10.
5 ID 6.
6 IDP EAS EAR dv/dt 135 PD 1.
07 Tj Tstg 150 -55 150 0.
35 W/ 42 360 13.
5 4.
5 44 6.
6* 42* mJ mJ V/ns W Q 1 2 3 1.
GAT...


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