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2SC1047

Panasonic Semiconductor
Part Number 2SC1047
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Mar 22, 2005
Detailed Description Transistors 2SC1047 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 5.0±0.2 4.0±0.2 ■ F...
Datasheet PDF File 2SC1047 PDF File

2SC1047
2SC1047

Overview
Transistors 2SC1047 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 5.
0±0.
2 4.
0±0.
2 ■ Features 5.
1±0.
2 • Optimum for RF amplification of FM/AM radios • High transition frequency fT 0.
7±0.
2 12.
9±0.
5 0.
7±0.
1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO 30 V e Collector-emitter voltage (Base open) VCEO 20 V c type) Emitter-base voltage (Collector open) VEBO 3 V n d ge.
ed Collector current IC 20 mA 2.
3±0.
2 le sta ntinu Collector power dissipation PC 400 mW a e cyc isco Junction temperature Tj 150 °C life d, d Storage temperature Tstg −55 to +150 °C 0.
45+–00.
.
115 2.
5+–00.
.
26 2.
5+–00.
.
26 0.
45+–00.
.
115 1 23 1: Emitter 2: Collector 3: Base TO-92-B1 Package intenntinus followlianngefdoudrisPcroondtiuncuted type ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Min Typ Max Unit c d inc e typ Collector-base voltage (Em...


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