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2SC1815L

Part Number	2SC1815L
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN TRANSISTOR
Published	Mar 22, 2005
Detailed Description	2SC1815(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier App...
Datasheet	2SC1815L PDF File

Overview

2SC1815(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications Unit: mm · High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) · Excellent linearity of hFE : hFE (2) = 100 (typ.
) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.
1 mA)/hFE (IC = 2 mA) = 0.
95 (typ.
) · Low noise: NF = 0.
2dB (typ.
) (f = 1 kHz).
· Complementary to 2SA1015 (L).
(O, Y, GR class).
Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature...

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