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GT100DA60U

Vishay Siliconix
Part Number GT100DA60U
Manufacturer Vishay Siliconix
Description Insulated Gate Bipolar Transistor
Published Jan 9, 2012
Detailed Description www.DataSheet.co.kr GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 100 A FEATURES •...
Datasheet PDF File GT100DA60U PDF File

GT100DA60U
GT100DA60U

Overview
www.
DataSheet.
co.
kr GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 100 A FEATURES • Trench IGBT technology temperature coefficient • Square RBSOA • 3 μs short circuit capability • FRED Pt® antiparallel diodes with ultrasoft reverse recovery SOT-227 with positive • TJ maximum = 175 °C • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC 600 V 100 A at 117 °C 1.
72 V 100 A at 25 °C PRODUCT SUMMARY VCES IC DC VCE(on) typical at 100 A, 25 °C IF DC BENEFITS • Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, ...


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