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2SC2120

Part Number	2SC2120
Manufacturer	Toshiba Semiconductor
Description	TRANSISTOR
Published	Mar 22, 2005
Detailed Description	1112SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2120 Audio Power Amplifier Applications Unit...
Datasheet	2SC2120 PDF File

Overview

1112SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2120 Audio Power Amplifier Applications Unit: mm • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications.
• Complementary to 2SA950 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 35 30 5 800 160 600 150 −55~150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter break...

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