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VEC2819

Sanyo Semicon Device
Part Number VEC2819
Manufacturer Sanyo Semicon Device
Description P-Channel Silicon MOSFET / Schottky Barrier Diode
Published Jan 9, 2012
Detailed Description www.DataSheet.co.kr Ordering number : ENA0536 VEC2819 SANYO Semiconductors DATA SHEET VEC2819 Features • • MOSFET ...
Datasheet PDF File VEC2819 PDF File

VEC2819
VEC2819

Overview
www.
DataSheet.
co.
kr Ordering number : ENA0536 VEC2819 SANYO Semiconductors DATA SHEET VEC2819 Features • • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications DC / DC converter.
Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting.
[MOSFET] • Low ON-resistance • Ultrahigh-speed switching.
• 1.
8V drive.
[SBD] • Low switching noise.
• Low leakage current and high reliability due to planar structure.
Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage VRRM VRSM 30 30 V V VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2✕0.
8mm) 1unit --20 ±10 --3.
5 --14 1.
0...


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