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SI5511DC

Vishay Siliconix
Part Number SI5511DC
Manufacturer Vishay Siliconix
Description MOSFET
Published Jan 20, 2012
Detailed Description www.DataSheet.co.kr Si5511DC Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 ...
Datasheet PDF File SI5511DC PDF File

SI5511DC
SI5511DC

Overview
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DataSheet.
co.
kr Si5511DC Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 rDS(on) (Ω) 0.
055 at VGS = 4.
5 V 0.
090 at VGS = 2.
5 V 0.
150 at VGS = - 4.
5 V 0.
256 at VGS = - 2.
5 V ID (A) 4a,g 4a,g - 3.
6 a FEATURES Qg (Typ) 4.
2 nC • TrenchFET® Power MOSFETs APPLICATIONS • Buck-Boost - DSC - Portable Devices RoHS COMPLIANT P-Channel - 30 - 2.
7a 2.
85 nC 1206-8 Chip-FET ® 1 S1 D1 D1 D2 D2 G1 S2 G2 D1 S2 Marking Code EE XXX G2 G1 Lot Traceability and Date Code Part # Code S1 Bottom View Ordering Information: Si5511DC-T1-E3 (Lead (Pb)-free) D2 P-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS N-Channel 30 ± 12 4a, g 4a, g 4a, g 3.
9a 15 2.
6 1.
7b, c 3.
1 2.
0 2.
1b, c 1.
33b, ...


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