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SI6421DQ

Part Number	SI6421DQ
Manufacturer	Vishay Siliconix
Description	P-Channel MOSFET
Published	Jan 20, 2012
Detailed Description	www.DataSheet.co.kr Si6421DQ New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V...
Datasheet	SI6421DQ PDF File

Overview

www.
DataSheet.
co.
kr Si6421DQ New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.
0105 @ VGS = - 4.
5 V - 12 0.
0135 @ VGS = - 2.
5 V 0.
0175 @ VGS = - 1.
8 V D TrenchFETr Power MOSFET ID (A) - 9.
5 - 8.
5 - 7.
3 APPLICATIONS D Load Switch S* TSSOP-8 D S S G 1 2 3 4 Top View D P-Channel MOSFET D 8 D 7 S 6 S 5 D G * Source Pins 2, 3, 6 and 7 must be tied common.
Si6421DQ ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs - 12 "8 - 9.
5 Steady State Unit V - 7.
5 -6 - 30 A - 0.
95 1.
08 0.
69 - 55 to 150 W _C ID IDM IS PD TJ, Tstg - 7.
5 - 1.
5 1.
75 1.
14 THERMAL RESISTANCE RATINGS Parameter t v 10 sec M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a.
Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72125 S-03296—Rev.
A, 03-Mar-03 www.
vishay.
com Steady State Steady State RthJA RthJF Symbol Typical 55 95 38 Maximum 70 115 50 Unit _C/W 1 Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr Si6421DQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 550 mA VDS = 0 V, VGS = "8 V VDS = - 9.
6 V, VGS = 0 V VDS = - 9.
6 V, VGS = 0 V, TJ = 70_C VDS = - 5 V, VGS = - 4.
5 V VGS = - 4.
5 V, ID = - 9.
5 A Drain-Source On-State Resistancea rDS(on) VGS = - 2.
5 V, ID = - 8.
5 A VGS = - 1.
8 V, ID = - 7.
5 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = - 15 V, ID = - 9.
5 A IS = - 1.
5 A, VGS = 0 V 20 0.
008 0.
0105 0.
0135 50 - 0.
64 - 1.
1 0.
0105 0.
0135 0.
0175 S ...

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SI6421DQ P-Channel MOSFET - Vishay Siliconix

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