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SI6552DQ

Vishay Siliconix
Part Number SI6552DQ
Manufacturer Vishay Siliconix
Description MOSFET
Published Jan 20, 2012
Detailed Description www.DataSheet.co.kr Si6552DQ Vishay Siliconix Dual N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Chann...
Datasheet PDF File SI6552DQ PDF File

SI6552DQ
SI6552DQ

Overview
www.
DataSheet.
co.
kr Si6552DQ Vishay Siliconix Dual N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 rDS(on) (W) 0.
08 @ VGS = 4.
5 V 0.
11 @ VGS = 2.
5 V 0.
1 @ VGS = - 4.
5 V ID (A) "2.
8 "2.
1 "2.
5 "1.
9 P Channel P-Channel - 12 0.
18 @ VGS = - 2.
5 V D1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View S1 N-Channel MOSFET D2 P-Channel MOSFET D 8 D2 7 S2 6 S2 5 G2 G2 G1 Si6552DQ ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID IDM IS 1.
0 1.
0 0.
64 - 55 to 150 W _C Symbol VDS VGS N-Channel 20 "8 "2.
8 "2.
3 "20 P-Channel - 12 Unit V "2.
5 "2.
0 A - 1.
0 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a.
Surface Mounted on FR4 Board, t v 10 sec.
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