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IXFH68N20

IXYS Corporation
Part Number IXFH68N20
Manufacturer IXYS Corporation
Description Power MOSFET
Published Feb 5, 2012
Detailed Description www.DataSheet.co.kr HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25...
Datasheet PDF File IXFH68N20 PDF File

IXFH68N20
IXFH68N20

Overview
www.
DataSheet.
co.
kr HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS(on) IXFH/IXFT 68N20 IXFH/IXFT 74N20 200 V 68 A 35 mW 200 V 74 A 30 mW trr £ 200 ns Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C I S £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C 68N20 74N20 68N20 74N20 68N20 74N20 Maximum Ratings 200 200 ± 20 ± 30 68 74 272 296 68 74 45 5 360 -55 .
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+150 150 -55 .
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+150 V V V V A A A A A A mJ V/ns W °C °C °C °C g TO-247 AD (IXFH) (TAB) TO-268 (D3) ( IXFT) G S G = Gate, S = Source, D = Drain, TAB = Drain (TAB) Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) • Low • • • • • • • • • • • • rated package induc...


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