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2SC3225

Toshiba Semiconductor
Part Number 2SC3225
Manufacturer Toshiba Semiconductor
Description Silicon NPN TRANSISTOR
Published Mar 22, 2005
Detailed Description 2SC3225 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3225 Switching Applications Solenoid Drive Applications Indu...
Datasheet PDF File 2SC3225 PDF File

2SC3225
2SC3225

Overview
2SC3225 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3225 Switching Applications Solenoid Drive Applications Industrial Applications Unit: mm • High DC current gain: hFE = 500 (min) (IC = 400 mA) • Low collector-emitter saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 300 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 40 40 7 2 0.
5 900 150 −55 to 150 Unit V V V A A mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC TO-92MOD JEITA ― TOSHIBA 2-5J1A Weight: 0.
36 g (typ.
) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR)...


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