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2SC3265

Part Number	2SC3265
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN TRANSISTOR
Published	Mar 22, 2005
Detailed Description	2SC3265 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3265 Low Frequency Power Amplifier Applications...
Datasheet	2SC3265 PDF File

Overview

2SC3265 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3265 Low Frequency Power Amplifier Applications Power Switching Applications • High DC current gain: hFE (1) = 100 to 320 • Low saturation voltage: VCE (sat) = 0.
4 V (max) (IC = 500 mA, IB = 20 mA) • Complementary to 2SA1298 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 30 25 5 800 160 200 150 −55 to 150 V V V mA mA mW °C °C Note: Using continuously under heavy loads (e.
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